Enhancing the performance of blue GaN-based light emitting diodes with double electron blocking layers
- R and D Center for Semiconductor Lighting, Chinese Academy of Sciences, Beijing 100083 (China)
In this work, novel double Electron Blocking Layers for InGaN/GaN multiple quantum wells light-emitting diodes were proposed to mitigate the efficiency droop at high current density. The band diagram and carriers distributions were investigated numerically. The results indicate that due to a newly formed holes stack in the p-GaN near the active region, the hole injection has been improved and an uniform carriers distribution can be achieved. As a result, in our new structure with double Electron Blocking Layers, the efficiency droop has been reduced to 15.5 % in comparison with 57.3 % for the LED with AlGaN EBL at the current density of 100 A/cm{sup 2}.
- OSTI ID:
- 22454481
- Journal Information:
- AIP Advances, Vol. 5, Issue 3; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2158-3226
- Country of Publication:
- United States
- Language:
- English
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