Morphology and magneto-transport properties of electron doped La{sub 0.85}Te{sub 0.15}MnO{sub 3} thin film deposited on LaAlO{sub 3} substrate

Journal Article · Mon Sep 15 00:00:00 EDT 2014 · Materials Research Bulletin

DOI:https://doi.org/10.1016/J.MATERRESBULL.2014.05.022· OSTI ID:22420547

Bhat, Irshad ^[1]; Husain, Shahid ^[1]; Patil, S. I. ^[2]

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1. Department of Physics, Aligarh Muslim University, Aligarh 202002, (U.P) (India)
2. Department of Physics, University of Pune, Ganeshkhind, Pune 411007 (India)

Graphical abstract: Resistivity versus temperature plots of La{sub 0.85}Te{sub 0.15}MnO{sub 3} thin film under the applied magnetic field of 0 T, 5 T and 8 T. - Highlights: • La{sub 0.85}Te{sub 0.15}MnO{sub 3} manganite thin film is deposited on LaAlO{sub 3} using PLD technique. • Film is deposited at 750 °C, and is highly crystalline, single phase and c-axis oriented. • The film consists of grains with an average diameter of 60 nm. • Resistivity plots display double insulator-metal transitions. • XPS results confirm the electron doped (n-type) nature of the film. - Abstract: We report the structural, electronic transport and X-ray photoemission spectroscopic study of 100 nm thin film of La{sub 0.85}Te{sub 0.15}MnO{sub 3} grown on (0 0 1) LaAlO{sub 3} single crystal substrate by pulsed laser deposition. XRD results confirm that the film has good crystalline quality, single phase, and has a c-axis orientation. The atomic force microscopic (AFM) results showed that the film consists of grains with an average diameter of 60 nm. The resistivity measurement showed double insulator-metal transitions in absence and as well as in presence of the magnetic field. The resistivity peaks are ascribed to the intrinsic contribution of LTMO film and the tunnelling of spin-polarized electrons at grain boundaries. X-ray photoemission spectroscopy measurements suggest that Te ions are in the Te{sup 4+} state, while the Mn ions are forced to stay in the Mn{sup 2+} and Mn{sup 3+} valence state.

• OSTI ID: 22420547
• Journal Information: Materials Research Bulletin, Vol. 57; Other Information: Copyright (c) 2014 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINATES
ATOMIC FORCE MICROSCOPY
DOPED MATERIALS
ENERGY BEAM DEPOSITION
GRAIN BOUNDARIES
LANTHANUM COMPOUNDS
LASER RADIATION
MAGNETIC FIELDS
MANGANATES
MONOCRYSTALS
PHASE TRANSFORMATIONS
PHOTOEMISSION
PULSED IRRADIATION
SPIN ORIENTATION
SUBSTRATES
TELLURIUM COMPOUNDS
THIN FILMS
TUNNEL EFFECT
X-RAY DIFFRACTION
X-RAY PHOTOELECTRON SPECTROSCOPY