Study of Ga incorporation in glassy arsenic selenides by high-resolution XPS and EXAFS
- Equipe Verres et Céramiques UMR-CNRS 6226, Université de Rennes 1, 35042 Rennes Cedex (France)
- Center for Microelectronics and Nanotechnology, University of Rzeszow, 1, Pigonia Str., 35-310 Rzeszow (Poland)
- Department of Materials Science and Engineering, Lehigh University, 5 East Packer Avenue, Bethlehem, Pennsylvania 18015-3195 (United States)
Effect of Ga addition on the structure of vitreous As{sub 2}Se{sub 3} is studied using high-resolution X-ray photoelectron spectroscopy and extended X-ray absorption fine structure techniques. The “8-N” rule is shown to be violated for Ga atoms and, possibly, for certain number of As atoms. On the contrary, Se keeps its 2-fold coordination according to “8-N” rule in the amorphous phase throughout all the compositions. Crystalline inclusions appear in the amorphous structure of the investigated glasses at Ga concentrations greater than 3 at. %. These inclusions are presumably associated with Ga{sub 2}Se{sub 3} crystallites and transition phases/defects formed at the boundaries of these crystallites and host amorphous matrix. The existence of Ga–As and Se–Se bonds in the samples with higher Ga content is supported by present studies.
- OSTI ID:
- 22415773
- Journal Information:
- Journal of Chemical Physics, Vol. 142, Issue 18; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-9606
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
ABSORPTION
ABSORPTION SPECTROSCOPY
AMORPHOUS STATE
ARSENIC SELENIDES
ATOMS
CHEMICAL BONDS
CONCENTRATION RATIO
FINE STRUCTURE
GALLIUM SELENIDES
GLASS
MATRIX MATERIALS
PHASE TRANSFORMATIONS
RESOLUTION
X-RAY PHOTOELECTRON SPECTROSCOPY
X-RAY SPECTROSCOPY