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Title: Effect of the oxide layer on current-induced spin-orbit torques in Hf|CoFeB|MgO and Hf|CoFeB|TaO{sub x} structures

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4906352· OSTI ID:22415143
 [1]; ; ; ; ; ;  [1];  [2]
  1. Department of Electrical Engineering, University of California, Los Angeles, California 90095 (United States)
  2. Department of Physics, University of Çukurova, Adana 01330 (Turkey)

We study the effect of the oxide layer on the current-induced spin-orbit torques (SOTs) in perpendicularly magnetized Hf|CoFeB|MgO (MgO-capped) or Hf|CoFeB|TaO{sub x} (TaO{sub x}-capped) structures. The effective fields corresponding to both the field-like and damping-like current-induced SOTs are characterized using electric transport measurements. Both torques are found to be significantly stronger in MgO-capped structures than those in TaO{sub x}-capped structures. The difference in field-like and damping-like SOTs in the different structures may be attributed to the different Rashba-like Hamiltonian, arising from the difference in the electric potential profiles across the oxide|ferromagnet interfaces in the two cases, as well as possible structural and oxidation differences in the underlying CoFeB and Hf layers. Our results show that the oxide layer in heavy-metal|ferromagnet|oxide trilayer structures has a very significant effect on the generated SOTs for manipulation of ferromagnetic layers. These findings could potentially be used to engineer SOT devices with enhanced current-induced switching efficiency.

OSTI ID:
22415143
Journal Information:
Applied Physics Letters, Vol. 106, Issue 3; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
Country of Publication:
United States
Language:
English