Heavy and light hole transport in nominally undoped GaSb substrates
- School of Electrical, Electronic and Computer Engineering, The University of Western Australia, Crawley WA 6009 (Australia)
- National Institute of Information and Communications Technology, Koganei, Tokyo 1848795 (Japan)
In this work, we report results of a study of electronic transport in nominally undoped p-type GaSb wafers typically employed as substrate material for the epitaxial growth of InAs/GaInSb type-II superlattices. Magnetic field dependent Hall-effect measurements and high-resolution mobility spectrum analysis clearly indicate p-type conductivity due to carriers in both the heavy and light hole bands. The extracted hole concentrations indicate a thermal activation energy of 17.8 meV for the dominant native acceptor-like defects. A temperature-independent effective mass ratio of 9.0 ± 0.8 was determined from the ratio of measured heavy and light hole concentrations. Over the 56 K–300 K temperature range, the light hole mobility was found to be 4.7 ± 0.7 times higher than the heavy hole mobility. The measured room temperature mobilities for the light and heavy holes were 2550 cm{sup 2}/Vs and 520 cm{sup 2}/Vs, respectively.
- OSTI ID:
- 22415136
- Journal Information:
- Applied Physics Letters, Vol. 106, Issue 3; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CHARGE TRANSPORT
CONCENTRATION RATIO
GALLIUM ANTIMONIDES
HALL EFFECT
HOLE MOBILITY
HOLES
INDIUM ARSENIDES
MAGNETIC FIELDS
SEMICONDUCTOR MATERIALS
SUBSTRATES
SUPERLATTICES
TEMPERATURE RANGE 0273-0400 K