Extended wavelength mid-infrared photoluminescence from type-I InAsN and InGaAsN dilute nitride quantum wells grown on InP
- Physics Department, Lancaster University, Lancaster LA1 4YB (United Kingdom)
- Department of Electrical and Computer Engineering, University of Wisconsin, 1415 Engineering Drive, Madison, Wisconsin 53706 (United States)
- Department of Chemical and Biological Engineering, University of Wisconsin, 1415 Engineering Drive, Madison, Wisconsin 53706 (United States)
Extended wavelength photoluminescence emission within the technologically important 2–5 μm spectral range has been demonstrated from InAs{sub 1−x}N{sub x} and In{sub 1−y}Ga{sub y}As{sub 1−x}N{sub x} type I quantum wells grown onto InP. Samples containing N ∼ 1% and 2% exhibited 4 K photoluminescence emission at 2.0 and 2.7 μm, respectively. The emission wavelength was extended out to 2.9 μm (3.3 μm at 300 K) using a metamorphic buffer layer to accommodate the lattice mismatch. The quantum wells were grown by molecular beam epitaxy and found to be of a high structural perfection as evidenced in the high resolution x-ray diffraction measurements. The photoluminescence was more intense from the quantum wells grown on the metamorphic buffer layer and persisted up to room temperature. The mid-infrared emission spectra were analysed, and the observed transitions were found to be in good agreement with the calculated emission energies.
- OSTI ID:
- 22415111
- Journal Information:
- Applied Physics Letters, Vol. 106, Issue 23; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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