Enhanced damage buildup in C{sup +}-implanted GaN film studied by a monoenergetic positron beam
- Department of Physics, Hubei Nuclear Solid Physics Key Laboratory, Wuhan University, Wuhan 430072 (China)
- Advanced Science Research Center, Japan Atomic Energy Agency, 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan)
Wurtzite GaN films grown by hydride vapor phase epitaxy were implanted with 280 keV C{sup +} ions to a dose of 6 × 10{sup 16 }cm{sup −2}. Vacancy-type defects in C{sup +}-implanted GaN were probed using a slow positron beam. The increase of Doppler broadening S parameter to a high value of 1.08–1.09 after implantation indicates introduction of very large vacancy clusters. Post-implantation annealing at temperatures up to 800 °C makes these vacancy clusters to agglomerate into microvoids. The vacancy clusters or microvoids show high thermal stability, and they are only partially removed after annealing up to 1000 °C. The other measurements such as X-ray diffraction, Raman scattering and Photoluminescence all indicate severe damage and even disordered structure induced by C{sup +}-implantation. The disordered lattice shows a partial recovery after annealing above 800 °C. Amorphous regions are observed by high resolution transmission electron microscopy measurement, which directly confirms that amorphization is induced by C{sup +}-implantation. The disordered GaN lattice is possibly due to special feature of carbon impurities, which enhance the damage buildup during implantation.
- OSTI ID:
- 22413194
- Journal Information:
- Journal of Applied Physics, Vol. 117, Issue 8; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
AMORPHOUS STATE
ANNEALING
CARBON IONS
DOPPLER BROADENING
EMISSION SPECTRA
FILMS
GALLIUM NITRIDES
HYDRIDES
PHASE STABILITY
PHOTOLUMINESCENCE
POSITRON BEAMS
RAMAN SPECTROSCOPY
TRANSMISSION ELECTRON MICROSCOPY
VACANCIES
VAPOR PHASE EPITAXY
X-RAY DIFFRACTION