Theory of resonant tunneling in bilayer-graphene/hexagonal-boron-nitride heterostructures

Journal Article · Mon Mar 02 00:00:00 EST 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4914324· OSTI ID:22412773

Barrera, Sergio C. de la; Feenstra, Randall M. ^[1]

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1. Department of Physics, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States)

A theory is developed for calculating vertical tunneling current between two sheets of bilayer graphene separated by a thin, insulating layer of hexagonal boron nitride, neglecting many-body effects. Results are presented using physical parameters that enable comparison of the theory with recently reported experimental results. Observed resonant tunneling and negative differential resistance in the current–voltage characteristics are explained in terms of the electrostatically-induced band gap, gate voltage modulation, density of states near the band edge, and resonances with the upper sub-band. These observations are compared to ones from similar heterostructures formed with monolayer graphene.

• OSTI ID: 22412773
• Journal Information: Applied Physics Letters, Vol. 106, Issue 9; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BORON NITRIDES
COMPARATIVE EVALUATIONS
DENSITY OF STATES
ELECTRIC CURRENTS
ELECTRIC POTENTIAL
GRAPHENE
HEXAGONAL LATTICES
LAYERS
MANY-BODY PROBLEM
MODULATION
SHEETS
TUNNEL EFFECT