Double Gaussian distribution of barrier height observed in densely packed GaN nanorods over Si (111) heterostructures
- Materials Research Centre, Indian Institute of Science, Bangalore 560012 (India)
GaN nanorods were grown by plasma assisted molecular beam epitaxy on intrinsic Si (111) substrates which were characterized by powder X-ray diffraction, field emission scanning electron microscopy, and photoluminescence. The current–voltage characteristics of the GaN nanorods on Si (111) heterojunction were obtained from 138 to 493 K which showed the inverted rectification behavior. The I-V characteristics were analyzed in terms of thermionic emission model. The temperature variation of the apparent barrier height and ideality factor along with the non-linearity of the activation energy plot indicated the presence of lateral inhomogeneities in the barrier height. The observed two temperature regimes in Richardson's plot could be well explained by assuming two separate Gaussian distribution of the barrier heights.
- OSTI ID:
- 22402825
- Journal Information:
- Journal of Applied Physics, Vol. 116, Issue 23; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ACTIVATION ENERGY
ELECTRIC CONDUCTIVITY
ELECTRIC POTENTIAL
FIELD EMISSION
GALLIUM NITRIDES
GAUSS FUNCTION
HEIGHT
HETEROJUNCTIONS
MOLECULAR BEAM EPITAXY
NANOSTRUCTURES
PHOTOLUMINESCENCE
SCANNING ELECTRON MICROSCOPY
SUBSTRATES
THERMIONIC EMISSION
X-RAY DIFFRACTION