Time-domain analysis of spin-torque induced switching paths in nanoscale CoFeB/MgO/CoFeB magnetic tunnel junction devices

Journal Article · Sun Dec 28 00:00:00 EST 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4905023· OSTI ID:22399155

Rippard, W. H.; Russek, S. E.; Pufall, M. R. ^[1]

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1. National Institute of Standards and Technology (NIST), Boulder, Colorado 80305 (United States)

We performed thousands of single-shot, real-time measurements of spin-transfer-torque induced switching in nanoscale CoFeB/MgO/CoFeB magnetic tunnel junctions having in-plane magnetizations. Our investigation discovered a variety of switching paths occurring in consecutive, nominally identical switching trials of a single device. By mapping the voltage as a function of time to an effective magnetization angle, we determined that reversal of a single device occurs via a variety of thermally activated paths. Our results show a complex switching behavior that has not been captured by previous observations and cannot be fully explained within the simple macrospin model.

• OSTI ID: 22399155
• Journal Information: Journal of Applied Physics, Vol. 116, Issue 24; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
COBALT COMPOUNDS
HETEROJUNCTIONS
IRON BORIDES
MAGNESIUM OXIDES
MAGNETIC FIELD REVERSAL
MAGNETIZATION
SPIN
SUPERCONDUCTING JUNCTIONS
TIME DEPENDENCE