Suppression of excess oxygen for environmentally stable amorphous In-Si-O thin-film transistors

Journal Article · Mon May 11 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4921054· OSTI ID:22399040

Aikawa, Shinya ^[1]; Mitoma, Nobuhiko; Kizu, Takio; Tsukagoshi, Kazuhito ^[1]; Nabatame, Toshihide ^[2]

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1. International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044 (Japan)
2. MANA Foundry and MANA Advanced Device Materials Group, National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044 (Japan)

We discuss the environmental instability of amorphous indium oxide (InO{sub x})-based thin-film transistors (TFTs) in terms of the excess oxygen in the semiconductor films. A comparison between amorphous InO{sub x} doped with low and high concentrations of oxygen binder (SiO{sub 2}) showed that out-diffusion of oxygen molecules causes drastic changes in the film conductivity and TFT turn-on voltages. Incorporation of sufficient SiO{sub 2} could suppress fluctuations in excess oxygen because of the high oxygen bond-dissociation energy and low Gibbs free energy. Consequently, the TFT operation became rather stable. The results would be useful for the design of reliable oxide TFTs with stable electrical properties.

• OSTI ID: 22399040
• Journal Information: Applied Physics Letters, Vol. 106, Issue 19; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
COMPARATIVE EVALUATIONS
CONCENTRATION RATIO
DIFFUSION
DISSOCIATION ENERGY
DOPED MATERIALS
ELECTRIC POTENTIAL
ELECTRICAL PROPERTIES
FLUCTUATIONS
FREE ENTHALPY
INDIUM OXIDES
MOLECULES
OXYGEN
SEMICONDUCTOR MATERIALS
SILICON OXIDES
THIN FILMS
TRANSISTORS