Kinetic arrest induced antiferromagnetic order in hexagonal FeMnP{sub 0.75}Si{sub 0.25} alloy

Journal Article · Mon Dec 29 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4905270· OSTI ID:22395616

Li, Guijiang; Li, Wei; Schönecker, Stephan; Li, Xiaoqing ^[1]; Delczeg-Czirjak, Erna K.; Kvashnin, Yaroslav O.; Eriksson, Olle ^[2]; Johansson, Börje ^[1]; Vitos, Levente ^[1]

---

1. Applied Materials Physics, Department of Materials Science and Engineering, KTH Royal Institute of Technology, SE-10044 Stockholm (Sweden)
2. Department of Physics and Astronomy, Division of Materials Theory, Uppsala University, Box 516, SE-75120 Uppsala (Sweden)

The magnetic state of the FeMnP{sub 0.75}Si{sub 0.25} alloy was investigated by first principles calculations. The coexistence of ferromagnetic and antiferromagnetic phases in FeMnP{sub 0.75}Si{sub 0.25} with the same hexagonal crystal structure was revealed. It was found that kinetic arrest during the transition from the high temperature disordered paramagnetic phase to the low temperature ordered ferromagnetic phase results in the intermediate metastable and partially disordered antiferromagnetic phase. We propose that the ratio of the ferromagnetic and antiferromagnetic phases in the FeMnP{sub 0.75}Si{sub 0.25} sample can be tuned by adjusting the kinetic process of atomic diffusion. The investigations suggest that careful control of the kinetic diffusion process provides another tuning parameter to design candidate magnetocaloric materials.

• OSTI ID: 22395616
• Journal Information: Applied Physics Letters, Vol. 105, Issue 26; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANTIFERROELECTRIC MATERIALS
ANTIFERROMAGNETISM
CRYSTAL STRUCTURE
DIFFUSION
FERROMAGNETIC MATERIALS
FERROMAGNETISM
HEXAGONAL LATTICES
IRON ALLOYS
MANGANESE ALLOYS
PARAMAGNETISM
PHOSPHORUS ADDITIONS
SILICON ADDITIONS
TEMPERATURE DEPENDENCE