Electronic and thermal effects in the insulator-metal phase transition in VO{sub 2} nano-gap junctions

Journal Article · Mon Dec 08 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4903806· OSTI ID:22395462

Joushaghani, Arash; Jeong, Junho; Stewart Aitchison, J.; Poon, Joyce K. S., ^[1]; Paradis, Suzanne; Alain, David ^[2]

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1. Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario M5S 3G4 (Canada)
2. Defence Research and Development Canada - Valcartier, 2459 Pie-XI Blvd. North, Quebec, Quebec G3J 1X5 (Canada)

By controlling the thermal transport of VO{sub 2} nano-gap junctions using device geometry, contact material, and applied voltage waveforms, the electronically induced insulator-metal phase transition is investigated in the adiabatic heating and transient carrier injection regimes. With a gradual ramping of an applied voltage on a microsecond time scale, the transition electric field threshold can be directly reduced by the Joule heating. With an abrupt applied voltage, the transition threshold is initiated by carriers injected within the first tens of nanoseconds, but the complete insulator-metal phase transition is limited by thermal redistribution times to hundreds of nanoseconds.

• OSTI ID: 22395462
• Journal Information: Applied Physics Letters, Vol. 105, Issue 23; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CHARGE CARRIERS
ELECTRIC CONTACTS
ELECTRIC FIELDS
ELECTRIC POTENTIAL
JOULE HEATING
METALS
PHASE TRANSFORMATIONS
SEMICONDUCTOR JUNCTIONS
TEMPERATURE DEPENDENCE
THERMAL CONDUCTION
TRANSIENTS
VANADIUM OXIDES
WAVE FORMS