Qualifying composition dependent p and n self-doping in CH{sub 3}NH{sub 3}PbI{sub 3}

Journal Article · Mon Oct 20 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4899051· OSTI ID:22350992

Wang, Qi; Shao, Yuchuan; Huang, Jinsong ^[1]; Xie, Haipeng; Lyu, Lu; Liu, Xiaoliang ^[2]; Gao, Yongli ^[3]

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1. Department of Mechanical and Materials Engineering and Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, Nebraska 68588-0656 (United States)
2. Hunan Key Laboratory for Super-microstructure and Ultrafast Process, College of Physics and Electronics, Central South University, Changsha 410083 (China)
3. Department of Physics and Astronomy, University of Rochester, Rochester, New York 14627 (United States)

We report the observation of self-doping in perovskite. CH{sub 3}NH{sub 3}PbI{sub 3} was found to be either n- or p-doped by changing the ratio of methylammonium halide (MAI) and lead iodine (PbI{sub 2}) which are the two precursors for perovskite formation. MAI-rich and PbI{sub 2}-rich perovskite films are p and n self-doped, respectively. Thermal annealing can convert the p-type perovskite to n-type by removing MAI. The carrier concentration varied as much as six orders of magnitude. A clear correlation between doping level and device performance was also observed.

• OSTI ID: 22350992
• Journal Information: Applied Physics Letters, Vol. 105, Issue 16; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
AMMONIUM COMPOUNDS
ANNEALING
CARRIERS
CONCENTRATION RATIO
CORRELATIONS
DOPED MATERIALS
EQUIPMENT
LEAD IODIDES
N-TYPE CONDUCTORS
PEROVSKITE
PRECURSOR
P-TYPE CONDUCTORS
THIN FILMS