Observation of strongly enhanced inverse spin Hall voltage in Fe{sub 3}Si/GaAs structures
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan (China)
- Center for Condensed Matter Sciences, National Taiwan University, Taipei 10617, Taiwan (China)
We performed spin pumping experiment on high quality, epitaxial Fe{sub 3}Si/GaAs structures grown by molecular beam epitaxy. By tailoring the thickness and doping (n, p) level of the conducting GaAs epi-layer, thermal heating common of ferromagnetic metal/semiconductor heterostructure was removed effectively. A large inverse spin Hall Effect (ISHE) voltage up to 49.2 μV was observed for Fe{sub 3}Si/p-GaAs. Smaller ISHE voltage (V{sub ISHE}) by a factor of ∼0.4 was obtained for Fe{sub 3}Si/n-GaAs, as scaled with its resistivity. By taking into account of the “self-induced” ISHE apparently observed in our samples, the minimum value of spin Hall angle θ{sub ISHE} for n-GaAs and p-GaAs was estimated to be 1.9 × 10{sup −4} and 2.8 × 10{sup −5}, respectively.
- OSTI ID:
- 22350908
- Journal Information:
- Applied Physics Letters, Vol. 105, Issue 15; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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