Enhanced efficiency of p-type doping by band-offset effect in wurtzite and zinc-blende GaAs/InAs-core-shell nanowires
- Key Laboratory of Polarized Materials and Devices, East china Normal University, shanghai 200241 (China)
- Department of Applied Physics, Donghua University, Shanghai 201620 (China)
Using first principles calculation based on density-functional theory, we investigated p-type electronic structures and the doping mechanism in wurtzite (WZ) and zinc-blende (ZB) GaAs/InAs-core-shell nanowires (NWs) along the [0001] and [111] directions, respectively. Comparing the doping in WZ and ZB core-shell NWs, we found it is easier and more stable to realize dopant in WZ NWs. Due to the type I band-offset, p-type doping in the GaAs-core of GaAs{sub core}/InAs{sub shell} for both WZ and ZB NWs makes that the valence band-edge electrons in the InAs-shell can spontaneously transfer to the impurity states, forming one-dimensional hole gas. In particular, this process accompanies with a reverse transition in WZ core-shell nanowire due to the existence of antibonding and bonding states.
- OSTI ID:
- 22314388
- Journal Information:
- Journal of Applied Physics, Vol. 116, Issue 9; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
Similar Records
First-principles study of quantum confinement and surface effects on the electronic properties of InAs nanowires
Controllable growth and optical properties of InP and InP/InAs nanostructures on the sidewalls of GaAs nanowires