Plasmonic modification of electron-longitudinal-optical phonon coupling in Ag-nanoparticle embedded InGaN/GaN quantum wells
- Department of Physics, University of North Texas, Denton, Texas 76203 (United States)
- Department of Physics, CICECO, Universidade de Aveiro, 3810-193 Aveiro (Portugal)
- Institute of Photonics, University of Strathclyde, Wolfson Centre, 106 Rottenrow East, Glasgow G4 0NW (United Kingdom)
Surface plasmon enhanced GaN and InGaN quantum wells (QWs) show promise for use as room-temperature light emitters. The effectiveness of the plasmon enhancement, however, is limited by the strong electron/hole and longitudinal optical phonon coupling found in the III-V nitrides. The electron-phonon coupling within semiconductor QWs has been modified using silver nanoparticles embedded within the QWs. Direct evidence is provided for this change via confocal Raman spectroscopy of the samples. This evidence is augmented by Angle-dependent photoluminescence experiments which show the alteration of the electron-phonon coupling strength through measurement of the emitted phonon replicas. Together these demonstrate a direct modification of carrier-phonon interactions within the system, opening up the possibility of controlling the coupling strength to produce high-efficiency room-temperature light emitters.
- OSTI ID:
- 22311005
- Journal Information:
- Applied Physics Letters, Vol. 105, Issue 9; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
EFFICIENCY
ELECTRON-PHONON COUPLING
GALLIUM NITRIDES
INDIUM COMPOUNDS
INTERACTIONS
MODIFICATIONS
NANOPARTICLES
PHONONS
PHOTOLUMINESCENCE
QUANTUM WELLS
RAMAN SPECTROSCOPY
SEMICONDUCTOR MATERIALS
SILVER
SURFACES
TEMPERATURE RANGE 0273-0400 K
VISIBLE RADIATION