Selective area growth of Bernal bilayer epitaxial graphene on 4H-SiC (0001) substrate by electron-beam irradiation

Journal Article · Mon Nov 03 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4901074· OSTI ID:22310698

Dharmaraj, P.; Parthiban, S.; Kwon, J. Y. ^[1]; Gautam, S.; Chae, K. H. ^[2]; Asokan, K. ^[3]

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1. School of Integrated Technology and Yonsei Institute of Convergence Technology, Yonsei University, Yeonsu-gu, Incheon 406-840 (Korea, Republic of)
2. Advanced Analysis Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of)
3. Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110 067 (India)

We report selective area growth of large area homogeneous Bernal stacked bilayer epitaxial graphene (BLEG) on 4H-SiC (0001) substrate by electron-beam irradiation. Sublimation of Si occurs by energetic electron irradiations on SiC surface via breaking of Si–C bonds in the localized region, which allows the selective growth of graphene. Raman measurements ensure the formation of homogeneous BLEG with weak compressive strain of −0.08%. The carrier mobility of large area BLEG is ∼5100 cm{sup 2} V{sup −1} s{sup −1} with a sheet carrier density of 2.2 × 10{sup 13} cm{sup −2}. Current-voltage measurements reveal that BLEG on 4H-SiC forms a Schottky junction with an operation at mA level. Our study reveals that the barrier height at the Schottky junction is low (∼0.58 eV) due to the Fermi-level pinning above the Dirac point.

• OSTI ID: 22310698
• Journal Information: Applied Physics Letters, Vol. 105, Issue 18; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CARRIER DENSITY
CARRIER MOBILITY
CURRENTS
DIFFUSION BARRIERS
ELECTRIC CONDUCTIVITY
ELECTRIC CONTACTS
ELECTRIC POTENTIAL
ELECTRON BEAMS
EPITAXY
FERMI LEVEL
GRAPHENE
IRRADIATION
LAYERS
PHYSICAL RADIATION EFFECTS
SEMICONDUCTOR JUNCTIONS
SILICON CARBIDES
STRAINS
SUBSTRATES
SURFACES
TAIL ELECTRONS