Effect of annealing on graphene incorporated poly-(3-hexylthiophene):CuInS{sub 2} photovoltaic device
- Department of Electronic Science, University of Delhi, South Campus, Benito Juarez Road, New Delhi-110021 (India)
- Department of Electronic Science, University of Delhi, South Campus, Benito Juarez Road, New Delhi-110021, India and SGTB Khalsa College, University of Delhi, Delhi-110007 (India)
The effect of thermal annealing on the power conversion efficiency (PCE) of poly(3-hexylthiophene) (P3HT):CuInS{sub 2} quantum dot:graphene photovoltaic device has been studied by analyzing optical characteristics of composite films and electrical characteristics of the device with structure indium tin oxide/poly[ethylene dioxythiophene]:poly[styrene sulfonate] (ITO/PEDOT:PSS)/P3HT:CIS:graphene/LiF/aluminum. It was observed that after annealing at 120°C for 15 min a typical device containing 0.005 % w/w of graphene shows the best performance with a PCE of 1.3%, an open-circuit voltage of 0.44V, a short-circuit current density of 7.6 mA/cm{sup 2}, and a fill factor of 0.39. It is observed that the thermal annealing considerably enhances the efficiency of solar cells. However, an annealing at higher temperature such as at 140°C results in a decrease in the device efficiency.
- OSTI ID:
- 22308017
- Journal Information:
- AIP Conference Proceedings, Vol. 1620, Issue 1; Conference: Optics 14: International conference on optics: Light and its interactions with matter, Calicut, Kerala (India), 19-21 Mar 2014; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
77 NANOSCIENCE AND NANOTECHNOLOGY
ALUMINIUM
ANNEALING
COPPER SULFIDES
CURRENT DENSITY
ELECTRIC POTENTIAL
ETHYLENE
FILL FACTORS
GRAPHENE
INDIUM SULFIDES
LITHIUM FLUORIDES
PHOTOVOLTAIC CONVERSION
PHOTOVOLTAIC EFFECT
QUANTUM DOTS
SOLAR CELLS
STYRENE
TEMPERATURE DEPENDENCE
TIN OXIDES