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Title: Effect of annealing on graphene incorporated poly-(3-hexylthiophene):CuInS{sub 2} photovoltaic device

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.4898216· OSTI ID:22308017
;  [1];  [2]
  1. Department of Electronic Science, University of Delhi, South Campus, Benito Juarez Road, New Delhi-110021 (India)
  2. Department of Electronic Science, University of Delhi, South Campus, Benito Juarez Road, New Delhi-110021, India and SGTB Khalsa College, University of Delhi, Delhi-110007 (India)

The effect of thermal annealing on the power conversion efficiency (PCE) of poly(3-hexylthiophene) (P3HT):CuInS{sub 2} quantum dot:graphene photovoltaic device has been studied by analyzing optical characteristics of composite films and electrical characteristics of the device with structure indium tin oxide/poly[ethylene dioxythiophene]:poly[styrene sulfonate] (ITO/PEDOT:PSS)/P3HT:CIS:graphene/LiF/aluminum. It was observed that after annealing at 120°C for 15 min a typical device containing 0.005 % w/w of graphene shows the best performance with a PCE of 1.3%, an open-circuit voltage of 0.44V, a short-circuit current density of 7.6 mA/cm{sup 2}, and a fill factor of 0.39. It is observed that the thermal annealing considerably enhances the efficiency of solar cells. However, an annealing at higher temperature such as at 140°C results in a decrease in the device efficiency.

OSTI ID:
22308017
Journal Information:
AIP Conference Proceedings, Vol. 1620, Issue 1; Conference: Optics 14: International conference on optics: Light and its interactions with matter, Calicut, Kerala (India), 19-21 Mar 2014; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
Country of Publication:
United States
Language:
English