Formation and photoluminescence of GaAs{sub 1−x}N{sub x} dilute nitride achieved by N-implantation and flash lamp annealing
- Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Institute of Ion Beam Physics and Materials Research, P.O. Box 510119, 01314 Dresden (Germany)
In this paper, we present the fabrication of dilute nitride semiconductor GaAs{sub 1−x}N{sub x} by nitrogen-ion-implantation and flash lamp annealing (FLA). N was implanted into the GaAs wafers with atomic concentration of about x{sub imp1} = 0.38% and x{sub imp2} = 0.76%. The GaAs{sub 1−x}N{sub x} layer is regrown on GaAs during FLA treatment in a solid phase epitaxy process. Room temperature near band-edge photoluminescence (PL) has been observed from the FLA treated GaAs{sub 1−x}N{sub x} samples. According to the redshift of the near band-edge PL peak, up to 80% and 44% of the implanted N atoms have been incorporated into the lattice by FLA for x{sub imp1} = 0.38% and x{sub imp2} = 0.76%, respectively. Our investigation shows that ion implantation followed by ultrashort flash lamp treatment, which allows for large scale production, exhibits a promising prospect on bandgap engineering of GaAs based semiconductors.
- OSTI ID:
- 22304468
- Journal Information:
- Applied Physics Letters, Vol. 105, Issue 1; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Nitrogen implantation in GaAs/sub 1-x/P/sub x/. I. Photoluminescence properties
Liquid phase epitaxy of binary III–V nanocrystals in thin Si layers triggered by ion implantation and flash lamp annealing