Photo-carrier control of exchange bias in BiFeO{sub 3}/La{sub 2/3}Sr{sub 1/3}MnO{sub 3} thin films
We report the facile control of exchange bias in BiFeO{sub 3}/La{sub 2/3}Sr{sub 1/3}MnO{sub 3} (BFO/LSMO) thin films on an SrTiO{sub 3} (STO) substrate using light irradiation. Illumination with weak red light (λ: 630 nm, intensity: ∼1 mW/cm{sup 2}) reduced the exchange bias field (H{sub E}) of BFO/LSMO from +30 Oe in the dark to −2 Oe with red light. In accompanying the decrease of H{sub E}, the resistance of BFO/LSMO significantly increased. These results were attributed to the reduction in the hole-doping ratio of LSMO and the weakened exchange coupling between Fe and Mn spins at the interface, resulting from photo-injected electrons from the STO substrate. Successive turning on/off of red light gives rise to cyclical change of corresponding H{sub E}, which should be useful for applications like photo-controlled tunneling magnetoresistance devices.
- OSTI ID:
- 22304455
- Journal Information:
- Applied Physics Letters, Vol. 104, Issue 25; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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