Current collapse imaging of Schottky gate AlGaN/GaN high electron mobility transistors by electric field-induced optical second-harmonic generation measurement
- Toyota Central R and D Laboratories Inc., Nagakute, Aichi 480-1192 (Japan)
- Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552 (Japan)
Two-dimensional current collapse imaging of a Schottky gate AlGaN/GaN high electron mobility transistor device was achieved by optical electric field-induced second-harmonic generation (EFISHG) measurements. EFISHG measurements can detect the electric field produced by carriers trapped in the on-state of the device, which leads to current collapse. Immediately after (e.g., 1, 100, or 800 μs) the completion of drain-stress voltage (200 V) in the off-state, the second-harmonic (SH) signals appeared within 2 μm from the gate edge on the drain electrode. The SH signal intensity became weak with time, which suggests that the trapped carriers are emitted from the trap sites. The SH signal location supports the well-known virtual gate model for current collapse.
- OSTI ID:
- 22303860
- Journal Information:
- Applied Physics Letters, Vol. 104, Issue 25; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM COMPOUNDS
CARRIERS
CURRENTS
ELECTRIC FIELDS
ELECTRIC POTENTIAL
ELECTRODES
ELECTRON MOBILITY
EMISSION
FIELD EFFECT TRANSISTORS
GALLIUM NITRIDES
HARMONIC GENERATION
SCHOTTKY EFFECT
STRESSES
TRAPPING
TRAPS
TWO-DIMENSIONAL CALCULATIONS