Two-dimensional semimetal in wide HgTe quantum wells: Charge-carrier energy spectrum and magnetotransport

Journal Article · Sun Dec 15 00:00:00 EST 2013 · Semiconductors

DOI:https://doi.org/10.1134/S1063782613120063· OSTI ID:22300429

Minkov, G. M. ^[1]; Rut, O. E. ^[2]; Sherstobitov, A. A. ^[1]; Dvoretsky, S. A.; Mikhailov, N. N. ^[3]

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1. Russian Academy of Sciences, Institute of Metal Physics, Ural Branch (Russian Federation)
2. Ural Federal University, Institute of Natural Sciences (Russian Federation)
3. Russian Academy of Sciences, Institute of Semiconductor Physics, Siberian Branch (Russian Federation)

The magnetoresistivity and the Hall and Shubnikov-de Haas effects in heterostructures with a single 20.2-nm-wide quantum well made from the gapless semiconductor HgTe are studied experimentally. The measurements are performed on gated samples over a wide range of electron and hole densities. The data obtained are used to reconstruct the energy spectrum of electrons and holes in the vicinity of the extrema of the quantum-confinement subbands. It is shown that the charge-carrier dispersion relation in the investigated systems differs from that calculated within the framework of the conventional kp model.

• OSTI ID: 22300429
• Journal Information: Semiconductors, Vol. 47, Issue 12; Other Information: Copyright (c) 2013 Pleiades Publishing, Ltd.; http://www.springer-ny.com; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
DISPERSION RELATIONS
ELECTRONS
ENERGY SPECTRA
MERCURY TELLURIDES
QUANTUM WELLS
SEMICONDUCTOR MATERIALS
SEMIMETALS