In-situ scanning electron microscope observation of electromigration-induced void growth in 30 nm ½ pitch Cu interconnect structures
- imec, Kapeldreef 75, 3001 Leuven (Belgium)
- Fujitsu Semiconductor Limited, 50 Fuchigami, Akiruno, Tokyo 197-0833 (Japan)
In-situ electromigration tests have been performed inside a scanning electron microscope on 30 nm wide single damascene interconnects without vias, where a good resolution was obtained and drift velocities during void growth could be measured at 300 °C. These tests showed direct evidence that the cathode end of the line, where a polycrystalline grain cluster encounters a bigger grain, can act as a flux divergent point of Cu diffusion. Moreover, it was found that a thicker barrier suppresses barrier/interface diffusivity of Cu atoms, thereby slowing down electromigration-induced void growth. It was also demonstrated that Cobalt based metal caps are beneficial to electromigration for advanced interconnects where thinner barriers are required.
- OSTI ID:
- 22278039
- Journal Information:
- Journal of Applied Physics, Vol. 115, Issue 7; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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