A silicon nanocrystal tunnel field effect transistor
- Département de Physique, Université de Sherbrooke, 2500 Boulevard de l'Université, Sherbrooke, Quebec J1K 2R1 (Canada)
- Institut Interdisciplinaire d'Innovation Technologique (3IT), Université de Sherbrooke, 3000 Boulevard de l'Université, Sherbrooke, Quebec J1K 0A5 (Canada)
In this work, we demonstrate a silicon nanocrystal Field Effect Transistor (ncFET). Its operation is similar to that of a Tunnelling Field Effect Transistor (TFET) with two barriers in series. The tunnelling barriers are fabricated in very thin silicon dioxide and the channel in intrinsic polycrystalline silicon. The absence of doping eliminates the problem of achieving sharp doping profiles at the junctions, which has proven a challenge for large-scale integration and, in principle, allows scaling down the atomic level. The demonstrated ncFET features a 10{sup 4} on/off current ratio at room temperature, a low 30 pA/μm leakage current at a 0.5 V bias, an on-state current on a par with typical all-Si TFETs and bipolar operation with high symmetry. Quantum dot transport spectroscopy is used to assess the band structure and energy levels of the silicon island.
- OSTI ID:
- 22273406
- Journal Information:
- Applied Physics Letters, Vol. 104, Issue 19; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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