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Title: Crystallization behavior in Se{sub 90}Te{sub 10} and Se{sub 80}Te{sub 20} thin films

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.4869547· OSTI ID:22271169
;  [1];  [2]; ;  [3]
  1. Department of Physical Chemistry, Faculty of Chemical Technology, University of Pardubice, Studentská 573, 532 10 Pardubice (Czech Republic)
  2. Department of Inorganic Technology, Faculty of Chemical Technology, University of Pardubice, Doubravice 41, 532 10 Pardubice (Czech Republic)
  3. National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)

Isothermal crystal growth kinetics in Se{sub 90}Te{sub 10} and Se{sub 80}Te{sub 20} thin films was studied by microscopy and in situ X-ray diffraction (XRD) measurements. The spherulite-like crystals grew linearly with time. In a narrow temperature range of between 65 and 85 °C, crystal growth rates exhibit simple exponential behavior with activation energies E{sub G} = 193 ± 4 kJ mol{sup −1} for Se{sub 90}Te{sub 10} and E{sub G} = 195 ± 4 kJ mol{sup −1} for Se{sub 80}Te{sub 20}. The crystal growth in both compositions is controlled by liquid-crystal interface kinetics and can be described by a screw dislocation growth model. From the XRD data, the crystallization fraction was estimated. The crystallization data were described by Johnson-Mehl-Avrami (JMA) model with Avrami exponents m = 1.4 ± 0.3 for Se{sub 90}Te{sub 10} and m = 1.6 ± 0.4 for Se{sub 80}Te{sub 20}. Activation energies were estimated from the temperature dependence of rate constant evaluated from the JMA model. The activation energies of nucleation-growth process were found to be E{sub c} = 184 ± 21 kJ mol{sup −1} for Se{sub 90}Te{sub 10} and E{sub c} = 179 ± 7 kJ mol{sup −1} for Se{sub 80}Te{sub 20}, and are comparable with activation energies of crystal growth.

OSTI ID:
22271169
Journal Information:
Journal of Applied Physics, Vol. 115, Issue 12; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
Country of Publication:
United States
Language:
English