Crystallization behavior in Se{sub 90}Te{sub 10} and Se{sub 80}Te{sub 20} thin films
- Department of Physical Chemistry, Faculty of Chemical Technology, University of Pardubice, Studentská 573, 532 10 Pardubice (Czech Republic)
- Department of Inorganic Technology, Faculty of Chemical Technology, University of Pardubice, Doubravice 41, 532 10 Pardubice (Czech Republic)
- National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)
Isothermal crystal growth kinetics in Se{sub 90}Te{sub 10} and Se{sub 80}Te{sub 20} thin films was studied by microscopy and in situ X-ray diffraction (XRD) measurements. The spherulite-like crystals grew linearly with time. In a narrow temperature range of between 65 and 85 °C, crystal growth rates exhibit simple exponential behavior with activation energies E{sub G} = 193 ± 4 kJ mol{sup −1} for Se{sub 90}Te{sub 10} and E{sub G} = 195 ± 4 kJ mol{sup −1} for Se{sub 80}Te{sub 20}. The crystal growth in both compositions is controlled by liquid-crystal interface kinetics and can be described by a screw dislocation growth model. From the XRD data, the crystallization fraction was estimated. The crystallization data were described by Johnson-Mehl-Avrami (JMA) model with Avrami exponents m = 1.4 ± 0.3 for Se{sub 90}Te{sub 10} and m = 1.6 ± 0.4 for Se{sub 80}Te{sub 20}. Activation energies were estimated from the temperature dependence of rate constant evaluated from the JMA model. The activation energies of nucleation-growth process were found to be E{sub c} = 184 ± 21 kJ mol{sup −1} for Se{sub 90}Te{sub 10} and E{sub c} = 179 ± 7 kJ mol{sup −1} for Se{sub 80}Te{sub 20}, and are comparable with activation energies of crystal growth.
- OSTI ID:
- 22271169
- Journal Information:
- Journal of Applied Physics, Vol. 115, Issue 12; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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