Silicon buried gratings for dielectric laser electron accelerators
- Bell Labs, Alcatel-Lucent, 791 Holmdel Road, Holmdel, New Jersey 07733 (United States)
- E. L. Ginzton Lab., Stanford University, Stanford, California 94305 (United States)
This paper describes design and simulations of dielectric laser electron accelerators that achieve Gigavolt-per-meter (GV/m) accelerating gradients and wide electron channels (>1 μm). The accelerator design is based on a silicon buried grating structure that enables flexible phase synchronization, large electron channel fields, and low standing-wave ratio in the material. This design increases the accelerating gradients to more than double those of reported quartz grating accelerators, thereby reducing the input laser fluence by 60% for the same accelerating gradient. With a 100 fs pulsed laser, our silicon buried gratings can achieve a maximum gradient of 1.1 GV/m, indicating that these accelerators have potential for numerous electron-accelerator applications.
- OSTI ID:
- 22269193
- Journal Information:
- Applied Physics Letters, Vol. 104, Issue 18; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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