Low-temperature processable amorphous In-W-O thin-film transistors with high mobility and stability

Journal Article · Mon Apr 14 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4871511· OSTI ID:22262596

Kizu, Takio; Aikawa, Shinya; Mitoma, Nobuhiko; Shimizu, Maki; Gao, Xu; Lin, Meng-Fang; Tsukagoshi, Kazuhito ^[1]; Nabatame, Toshihide ^[2]

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1. International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)
2. MANA Foundry and MANA Advanced Device Materials Group, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)

Thin-film transistors (TFTs) with a high stability and a high field-effect mobility have been achieved using W-doped indium oxide semiconductors in a low-temperature process (∼150 °C). By incorporating WO{sub 3} into indium oxide, TFTs that were highly stable under a negative bias stress were reproducibly achieved without high-temperature annealing, and the degradation of the field-effect mobility was not pronounced. This may be due to the efficient suppression of the excess oxygen vacancies in the film by the high dissociation energy of the bond between oxygen and W atoms and to the different charge states of W ions.

• OSTI ID: 22262596
• Journal Information: Applied Physics Letters, Vol. 104, Issue 15; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHARGE STATES
DISSOCIATION ENERGY
INDIUM OXIDES
MOBILITY
SEMICONDUCTOR MATERIALS
STABILITY
THIN FILMS
TRANSISTORS
TUNGSTEN IONS
TUNGSTEN OXIDES
VACANCIES