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Title: Ab initio study of phase transition of boron nitride between zinc-blende and rhombohedral structures

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.4848272· OSTI ID:22261857
; ; ;  [1]
  1. Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka 560-8531 (Japan)

Boron nitride has polymorphs such as zinc-blende (c-BN), wurtzite (w-BN), rhombohedral (r-BN), and graphite-like (h-BN) forms. We simulate the direct conversion of r-BN to c-BN through electronic excitation. In our calculation, the conversion is made possible by increasing the hole concentration to over 0.06/atom. This conversion should be experimentally possible by hole-doping via an electric double layer transistor (EDLT) or capacitor.

OSTI ID:
22261857
Journal Information:
AIP Conference Proceedings, Vol. 1566, Issue 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
Country of Publication:
United States
Language:
English