Investigation of nanostructured transparent conductive films grown by rotational-sequential-sputtering
- Department of Materials Engineering, Ming Chi University of Technology, 84 Gungjuan Rd., Taishan Dist. New Taipei City 24301, Taiwan and Center for Thin Film Technologies and Applications, Ming Chi University of Technology, 84 Gungjuan Rd., Taishan Dist. New Taipei City 24301, Taiwan (China)
This study fabricates three types of nanostructured conductive transparent films using a rotational-sequential-sputtering method. These films include (1) TiO{sub 2}/indium-tin oxide (ITO) and SiO{sub x}/ITO nanomultilayer films, the optical refractive indices of which can be manipulated in the range of 2.42–1.63 at a wavelength of 550 nm with a controlled resistivity range of 1 × 10{sup −3} to 2 × 10{sup −4} Ω·cm. (2) Multilayer ITO films are deposited on polyethylene terephthalate substrates, providing good flexibility and resistivity as low as 5 × 10{sup −4} Ω·cm. Finally, (3) ultrathin ITO films ranging from subnanometer to a few nanometers in thickness enable exploration of ITO film growth and thermal stability. X-ray reflection characterization provides a rapid, non-destructive method to measure the single-layer thicknesses of the nanomultilayer films and ultrathin ITO films at subnanoscale resolution.
- OSTI ID:
- 22258684
- Journal Information:
- Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Vol. 32, Issue 2; Other Information: (c) 2014 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 0734-2101
- Country of Publication:
- United States
- Language:
- English
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