Adjustment of threshold voltage in AlN/AlGaN/GaN high-electron mobility transistors by plasma oxidation and Al{sub 2}O{sub 3} atomic layer deposition overgrowth
- Faculty of Electrical Engineering and Information Technology, STU Bratislava, Ilkovičova 3, 812 19 Bratislava (Slovakia)
- EpiGaN NV, Kempische steenweg 293, 3500 Hasselt (Belgium)
We discuss possibilities of adjustment of a threshold voltage V{sub T} in normally off GaN high-electron mobility transistors (HEMTs) without compromising a maximal drain current I{sub DSmax}. Techniques of a low power plasma or thermal oxidation of 2-nm thick AlN cap over 3-nm thick AlGaN barrier are developed and calibrated for a thorough oxidation of the cap with a minimal density of surface donors at the inherent oxide-semiconductor interface. It has been shown that while a thermal oxidation technique leads to the channel and/or interface degradation, low density of surface donors and scalability of V{sub T} with additionally overgrown Al{sub 2}O{sub 3} may be obtained for plasma oxidized HEMTs. With 10-nm thick Al{sub 2}O{sub 3} deposited at 100 °C by atomic-layer deposition, we obtained V{sub T} of 1.6 V and I{sub DSmax} of 0.48 A/mm at a gate voltage of V{sub GS} = 8 V. Density of surface donors was estimated to be about 1.2 × 10{sup 13} cm{sup −2}, leaving most of the negative polarization charge at the semiconductor surface uncompensated. Further reduction of surface donors may be needed for even higher V{sub T}.
- OSTI ID:
- 22257125
- Journal Information:
- Applied Physics Letters, Vol. 104, Issue 1; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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