Temperature dependence of the band gap of GaSb{sub 1−x}Bi{sub x} alloys with 0 < x ≤ 0.042 determined by photoreflectance
- Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław (Poland)
- Stephenson Institute for Renewable Energy and Department of Physics, School of Physical Sciences, University of Liverpool, Liverpool L69 7ZF (United Kingdom)
- Material Sciences Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720 (United States)
- Department of Chemistry, University of Warwick, Coventry CV4 7AL (United Kingdom)
GaSb{sub 1−x}Bi{sub x} layers with 0 < x ≤ 0.042 have been studied by photoreflectance in 15–290 K temperature range. We found that due to the incorporation of Bi atoms into the GaSb host, the E{sub 0} band gap-related transition redshifts (∼30 meV per 1% Bi) and significantly broadens. The shift of the E{sub 0} transition in the temperature range 10–270 K has been found to be ∼70 meV, very similar to the energy shift in GaSb over the same temperature range. We analyzed the energy and broadening of the E{sub 0} transition using the Varshni and Bose-Einstein formulas and found that the Varshni and Bose-Einstein parameters of GaSb{sub 1−x}Bi{sub x} are similar to those of GaSb. Moreover we concluded that the inhomogeneities in GaSb{sub 1−x}Bi{sub x} alloys is less important than in dilute bismide arsenides since Bi atoms are more similar to Sb atoms (in electronegativities and ionic sizes)
- OSTI ID:
- 22253142
- Journal Information:
- Applied Physics Letters, Vol. 103, Issue 26; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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