Effects of working pressure on morphology, structural, electrical and optical properties of a-InGaZnO thin films
- Pohang Accelerator Laboratory, Pohang University of Science and Technology, Pohang 790-784 (Korea, Republic of)
- Department of Physics, Pohang University of Science and Technology, Pohang 790-784 (Korea, Republic of)
Amorphous In–Ga–Zn–O (a-IGZO) thin films (∼200 nm thickness) were deposited by radio-frequency (RF) magnetron sputtering on silicon and glass substrates at various working pressures (0.67–2.67 Pa) and a fixed oxygen-to-argon gas-flow ratio (O{sub 2}/Ar = 5%). The transparency of all of the films was more than 85% in the visible range. With increased working pressure, the surface morphology of the films, as observed under atomic force microscopy (AFM), became rough; the optical band gap, estimated by Tauc plot, increased, and the mobility and carrier concentrations, according to Hall measurement, decreased and increased, respectively. The resistivity of the films initially decreased (up to 2.00 Pa working pressure) and then increased (at 2.67 Pa). It is suggested that the electrical property changes were affected by the role of the oxygen vacancies, whether as effective donors or as scattering centers.
- OSTI ID:
- 22215521
- Journal Information:
- Materials Research Bulletin, Vol. 47, Issue 10; Conference: IFFM2011: 2011 international forum on functional materials, Jeju Island (Korea, Republic of), 28-31 Jul 2011, AFM-2: 2. special symposium on advances in functional materials, Jeju Island (Korea, Republic of), 28-31 Jul 2011; Other Information: Copyright (c) 2012 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
- Country of Publication:
- United States
- Language:
- English
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