Characterization of room temperature recrystallization kinetics in electroplated copper thin films with concurrent x-ray diffraction and electrical resistivity measurements
- Department of Applied Physics and Applied Mathematics, Columbia University, New York 10027 (United States)
- GlobalFoundries, T.J. Watson Research Center, Yorktown Heights, New York 10598 (United States)
- IBM, T.J. Watson Research Center, Yorktown Heights, New York 10598 (United States)
- State University of New York, the University at Albany, Albany, NY 12203 (United States)
- College of Nanoscale Science and Engineering, University at Albany, Albany, NY 12203 (United States)
Concurrent in-situ four-point probe resistivity and high resolution synchrotron x-ray diffraction measurements were used to characterize room temperature recrystallization in electroplated Cu thin films. The x-ray data were used to obtain the variation with time of the integrated intensities and the peak-breadth from the Cu 111 and 200 reflections of the transforming grains. The variation of the integrated intensity and resistivity data with time was analyzed using the Johnson-Mehl-Avrami-Kolmogorov (JMAK) model. For both 111-textured and non-textured electroplated Cu films, four-point probe resistivity measurements yielded shorter transformation times than the values obtained from the integrated intensities of the corresponding Cu 111 reflections. In addition, the JMAK exponents fitted to the resistivity data were significantly smaller. These discrepancies could be explained by considering the different material volumes from which resistivity and diffraction signals originated, and the physical processes which linked these signals to the changes in the evolving microstructure. Based on these issues, calibration of the resistivity analysis with direct structural characterization techniques is recommended.
- OSTI ID:
- 22162998
- Journal Information:
- Journal of Applied Physics, Vol. 113, Issue 21; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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