Inhomogeneous Si-doping of gold-seeded InAs nanowires grown by molecular beam epitaxy

Journal Article · Mon Jun 03 00:00:00 EDT 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4809576· OSTI ID:22162967

Rolland, Chloe; Coinon, Christophe; Wallart, Xavier; Leturcq, Renaud ^[1]; Caroff, Philippe ^[1]

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1. Institute of Electronics Microelectronics and Nanotechnology, UMR CNRS 8520, ISEN Department, Avenue Poincare, CS60069, 59652 Villeneuve d'Ascq Cedex (France)

We have investigated in situ Si doping of InAs nanowires grown by molecular beam epitaxy from gold seeds. The effectiveness of n-type doping is confirmed by electrical measurements showing an increase of the electron density with the Si flux. We also observe an increase of the electron density along the nanowires from the tip to the base, attributed to the dopant incorporation on the nanowire facets whereas no detectable incorporation occurs through the seed. Furthermore, the Si incorporation strongly influences the lateral growth of the nanowires without giving rise to significant tapering, revealing the complex interplay between axial and lateral growth.

• OSTI ID: 22162967
• Journal Information: Applied Physics Letters, Vol. 102, Issue 22; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ELECTRON DENSITY
FABRICATION
GOLD
INDIUM ARSENIDES
LAYERS
MOLECULAR BEAM EPITAXY
QUANTUM WIRES
SEMICONDUCTOR MATERIALS
SILICON ADDITIONS