Highly mismatched N-rich GaN{sub 1-x}Sb{sub x} films grown by low temperature molecular beam epitaxy

Journal Article · Mon Mar 11 00:00:00 EDT 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4795446· OSTI ID:22162780

Yu, K. M.; Walukiewicz, W. ^[1]; Sarney, W. L.; Svensson, S. P. ^[2]; Novikov, S. V.; Foxon, C. T. ^[3]; Detert, D.; Zhao, R. ^[1]; Denlinger, J. D. ^[4]; Dubon, O. D. ^[1]

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1. Materials Sciences Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720 (United States)
2. US Army Research Laboratory, 2800 Powder Mill Road, Adelphi, Maryland 20783 (United States)
3. School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD (United Kingdom)
4. Advanced Light Source, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720 (United States)

We have grown N-rich, dilute Sb GaN{sub 1-x}Sb{sub x} alloys by low temperature molecular beam epitaxy. At low growth temperature of <100 Degree-Sign C the material loses crystallinity and becomes primarily amorphous with small crystallites of 2-5 nm at a Sb composition of >4 at. %. Despite the different microstructures found for GaN{sub 1-x}Sb{sub x} alloys with different composition, the absorption edge shifts continuously from 3.4 eV (GaN) to close to 1 eV for samples with Sb content >30 at. %. GaN{sub 1-x}Sb{sub x} alloys with less than 5 at. % Sb show sufficient bandgap reduction ({approx}2 eV), making them suitable for photoelectrochemical applications.

• OSTI ID: 22162780
• Journal Information: Applied Physics Letters, Vol. 102, Issue 10; Other Information: (c) 2013 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ABSORPTION
ALLOYS
AMORPHOUS STATE
ANTIMONY ALLOYS
CRYSTAL GROWTH
ENERGY GAP
EV RANGE
FILMS
GALLIUM NITRIDES
LAYERS
MICROSTRUCTURE
MOLECULAR BEAM EPITAXY
REDUCTION
SEMICONDUCTOR MATERIALS