Photoelectron spectroscopic study of band alignment of polymer/ZnO photovoltaic device structure

Journal Article · Mon Jan 28 00:00:00 EST 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4790298· OSTI ID:22162703

Nagata, T.; Chikyow, T. ^[1]; Oh, S.; Wakayama, Y. ^[1]; Yamashita, Y. ^[1]; Yoshikawa, H.; Kobayashi, K. ^[2]; Ikeno, N. ^[1]

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1. International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044 (Japan)
2. NIMS Beamline Station at SPring-8, National Institute for Materials Science, 1-1-1 Koto, Sayo-cho, Sayo-gun, Hyogo 679-5148 (Japan)

Using x-ray photoelectron spectroscopy, we investigated the band alignment of a Ag/poly(3-hexylthiophene-2,5-diyl) (P3HT)/ZnO photovoltaic structure. At the P3HT/ZnO interface, a band bending of P3HT and a short surface depletion layer of ZnO were observed. The offset between the highest occupied molecular orbital of P3HT and the conduction band minimum of ZnO at the interface contributed to the open circuit voltage (Voc) was estimated to be approximately 1.5 {+-} 0.1 eV, which was bigger than that of the electrically measured effective Voc of P3HT/ZnO photovoltaic devices, meaning that the P3HT/ZnO photovoltaic structure has the potential to provide improved photovoltaic properties.

• OSTI ID: 22162703
• Journal Information: Applied Physics Letters, Vol. 102, Issue 4; Other Information: (c) 2013 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
APPROXIMATIONS
DEPLETION LAYER
EV RANGE
INTERFACES
MOLECULAR ORBITAL METHOD
ORGANIC COMPOUNDS
PHOTOVOLTAIC EFFECT
POLYMERS
SEMICONDUCTOR MATERIALS
SILVER
SURFACES
ULTRAVIOLET RADIATION
X-RAY PHOTOELECTRON SPECTROSCOPY
ZINC OXIDES