Effect of the accumulation of excess Ni atoms in the crystal structure of the intermetallic semiconductor n-ZrNiSn

Journal Article · Mon Jul 15 00:00:00 EDT 2013 · Semiconductors

DOI:https://doi.org/10.1134/S1063782613070208· OSTI ID:22121710

Rogl, P. ^[1]; Romaka, V. V. ^[2]; Stadnyk, Yu. V. ^[3]; Hlil, E. K. ^[4]; Krajovskii, V. Ya. ^[2]; Horyn, A. M. ^[3]

---

1. Universitaet Wien, Institut fuer Physikalische Chemie (Austria)
2. National University Lvivska Politekhnika (Ukraine)
3. Ivan Franko National University of Lviv (Ukraine)
4. CNRS, Laboratoire de Neel (France)

The crystal structure, electron density distribution, and energy, kinetic, and magnetic properties of the n-ZrNiSn intermetallic semiconductor heavily doped with a Ni impurity are investigated. The effect of the accumulation of an excess number of Ni{sub 1+x} atoms in tetrahedral interstices of the crystal structure of the semiconductor is found and the donor nature of such structural defects that change the properties of the semiconductor is established. The results obtained are discussed within the Shklovskii-Efros model of a heavily doped and strongly compensated semiconductor.

• OSTI ID: 22121710
• Journal Information: Semiconductors, Vol. 47, Issue 7; Other Information: Copyright (c) 2013 Pleiades Publishing, Ltd.; http://www.springer-ny.com; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BUILDUP
CRYSTAL STRUCTURE
DEFECTS
DISTRIBUTION
DOPED MATERIALS
ELECTRON DENSITY
IMPURITIES
MAGNETIC PROPERTIES
NICKEL
NICKEL ALLOYS
SEMICONDUCTOR MATERIALS
TIN ALLOYS
ZIRCONIUM ALLOYS