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Title: Monoisotopic silicon {sup 28}Si in spin resonance spectroscopy of electrons localized at donors

Journal Article · · Semiconductors
;  [1];  [2]; ;  [3]; ;  [4]
  1. Nizhni Novgorod State University (Russian Federation)
  2. Nizhni Novgorod State University, Physical-Technical Research Institute (Russian Federation)
  3. Russian Academy of Sciences, Institute for Chemistry of High-Purity Substances (Russian Federation)
  4. Leibniz Institute for Crystal Growth (Germany)

The fine structure of the spectra of a shallow-level Li donor center and a Fe{sup 0} deep donor (S = 1), which occupy tetrahedral interstices in a silicon lattice, is studied in monoisotopic silicon {sup 28}Si due to considerable narrowing of the lines of ESR spectra. In the case of the Li donor center, experimental data are found to confirm the role of internal strains in the crystal when observing the ESR spectra of the ground state 1s T{sub 2} and state E at T = 3.8-10 K with g < 2.000. The anisotropy in the distribution of strains, which turned out to have a tetragonal type, is investigated using the angular dependences of the line width of the spin resonance corresponding to the triplet state T{sub 2z} of Li. Similar anisotropy is found in the case of the introduction of Fe{sup 0} ions into the initial crystals based on the theory of angular dependences of the width of ESR lines caused by the transitions -1 {yields} 0 and 0 {yields} +1 ({Delta}M{sub s} = 1) in comparison with the transition -1 {yields} +1 ({Delta}M{sub s} = 2).

OSTI ID:
22105567
Journal Information:
Semiconductors, Vol. 47, Issue 2; Conference: Silicon 2012: 9. international conference 'Silicon-2012', St. Petersburg (Russian Federation), 9-13 Jul 2012, 8. school for young scientists, St. Petersburg (Russian Federation), 9-13 Jul 2012; Other Information: Copyright (c) 2013 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
Country of Publication:
United States
Language:
English