Structure, band gap, and Mn-related mid-gap states in epitaxial single crystal (Zn{sub 1-x}Mg{sub x}){sub 1-y}Mn{sub y}O thin films

Journal Article · Tue May 07 00:00:00 EDT 2013 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4803141· OSTI ID:22102376

Dapeng, Zhu; Guolei, Liu; Shuqin, Xiao; Shishen, Yan; Shumin, He; Li, Cai; Qinghao, Li; Shujun, Hu; Yanxue, Chen; Shishou, Kang; Liangmo, Mei ^[1]; Qiang, Cao ^[1]

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1. School of Physics, National Key Laboratory of Crystal Materials, Shandong University, Jinan, Shandong 250100 (China)

Epitaxial (Zn{sub 1-x}Mg{sub x}){sub 1-y}Mn{sub y}O thin films were grown on c-Al{sub 2}O{sub 3} substrates by radio frequency oxygen plasma assisted molecular beam epitaxy. Single crystal structure of the (Zn{sub 1-x}Mg{sub x}){sub 1-y}Mn{sub y}O films was revealed by reflection high energy electron diffraction and X-ray diffraction. The band gap of the films can be tuned dramatically with increasing the Mg concentration, while the onset energy of Mn-related mid-gap absorption band only shows a small blue shift. Photoconductivity measurements indicate the Mn-related mid-gap states in (Zn{sub 1-x}Mg{sub x}){sub 1-y}Mn{sub y}O films can create free carriers and contribute to charge transfer transitions. The conduction band offset {Delta}E{sub C} = 0.13 eV and valence band offset {Delta}E{sub V} = 0.1 eV were obtained for ZnO/Zn{sub 0.8}Mg{sub 0.2}O heterostructures, which increase to {Delta}E{sub C} = 0.21 eV and {Delta}E{sub V} = 0.14 eV for ZnO/Zn{sub 0.7}Mg{sub 0.3}O heterostructures.

• OSTI ID: 22102376
• Journal Information: Journal of Applied Physics, Vol. 113, Issue 17; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ABSORPTION
ALUMINIUM OXIDES
CARRIERS
CRYSTAL GROWTH
CRYSTAL STRUCTURE
ELECTRON DIFFRACTION
ENERGY GAP
LAYERS
MAGNESIUM COMPOUNDS
MANGANATES
MOLECULAR BEAM EPITAXY
MONOCRYSTALS
PHOTOCONDUCTIVITY
RADIOWAVE RADIATION
SUBSTRATES
THIN FILMS
X-RAY DIFFRACTION
ZINC COMPOUNDS
ZINC OXIDES