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Title: Enhanced piezoelectric performance of (0.98-x)Bi(Sc{sub 3/4}In{sub 1/4})O{sub 3}-xPbTiO{sub 3}-0.02Pb(Zn{sub 1/3}Nb{sub 2/3})O{sub 3} ternary high temperature piezoelectric ceramics

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.4799735· OSTI ID:22102347
 [1];  [1];  [2];  [1]
  1. Department of Materials Science and Engineering, College of Engineering, Peking University, Yiheyuan Road No.5, Beijing 100871 (China)
  2. School of Materials Science and Engineering, Shanghai University, Yanchang Road No. 149, Shanghai 200072 (China)

(0.98-x)Bi(Sc{sub 3/4}In{sub 1/4})O{sub 3}-xPbTiO{sub 3}-0.02Pb(Zn{sub 1/3}Nb{sub 2/3})O{sub 3} (BSI-PT-PZN) high temperature piezoelectric ceramics were prepared by traditional solid-state reaction method. Combining X-ray diffraction results with piezoelectric data, it was found that the morphotropic phase boundary (MPB) occurred at x = 0.575. The piezoelectric constant d{sub 33}, curie temperature T{sub c}, and electromechanical coupling factor k{sub p} of BIS-PT-PZN ceramics with MPB composition were 427 pC/N, 412 Degree-Sign C, and 0.51, respectively. Furthermore, the strain of BIS-PT-PZN ceramics reached up to 0.25% under the electric field of 40 kV/cm. Temperature-dependent electromechanical coupling coefficient for MPB composition was stable from room temperature up to 350 Degree-Sign C. The piezoelectric properties of BIS-PT-PZN ceramics were comparable to that of 0.36BiScO{sub 3}-0.64PbTiO{sub 3} (BS-PT) ceramics, and the piezoelectric constant d{sub 33} of BIS-PT-PZN ceramics was about twice that of our previous reported 0.4Bi(Sc{sub 3/4}In{sub 1/4})O{sub 3}-0.6PbTiO{sub 3} (BSI-PT) ceramics. The reduction in the expensive Sc{sub 2}O{sub 3} content and comparable piezoelectric properties with BS-PT ceramics indicated that BIS-PT-PZN ceramics were promising for commercial applications as high temperature actuators and sensors.

OSTI ID:
22102347
Journal Information:
Journal of Applied Physics, Vol. 113, Issue 14; Other Information: (c) 2013 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
Country of Publication:
United States
Language:
English