Atomic layer deposition of Al{sub 2}O{sub 3} on GaSb using in situ hydrogen plasma exposure
- Electronics Science and Technology Division, Naval Research Laboratory, Washington, DC 20375 (United States)
In this report, we study the effectiveness of hydrogen plasma surface treatments for improving the electrical properties of GaSb/Al{sub 2}O{sub 3} interfaces. Prior to atomic layer deposition of an Al{sub 2}O{sub 3} dielectric, p-GaSb surfaces were exposed to hydrogen plasmas in situ, with varying plasma powers, exposure times, and substrate temperatures. Good electrical interfaces, as indicated by capacitance-voltage measurements, were obtained using higher plasma powers, longer exposure times, and increasing substrate temperatures up to 250 Degree-Sign C. X-ray photoelectron spectroscopy reveals that the most effective treatments result in decreased SbO{sub x}, decreased Sb, and increased GaO{sub x} content at the interface. This in situ hydrogen plasma surface preparation improves the semiconductor/insulator electrical interface without the use of wet chemical pretreatments and is a promising approach for enhancing the performance of Sb-based devices.
- OSTI ID:
- 22089578
- Journal Information:
- Applied Physics Letters, Vol. 101, Issue 23; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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