Resistive switching and threshold switching behaviors in La{sub 0.1}Bi{sub 0.9}Fe{sub 1-x}Co{sub x}O{sub 3} ceramics

Journal Article · Wed Aug 01 00:00:00 EDT 2012 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4743013· OSTI ID:22089382

Wang, S. Y.; Qiu, Xue; Feng, Yu; Hou, X. G.; Yu, D. S.; Li, D. J. ^[1]; Liu, W. F. ^[2]; Gao, J. ^[3]

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1. College of Physics and Electronic Information Science, Tianjin Normal University, Tianjin 300074 (China)
2. Tianjin Key laboratory of Low Dimensional Materials Physics and Preparing Technology, Faculty of Science, Tianjin University, Tianjin 300072 (China)
3. Department of Physics, the University of Hong Kong, Pokfulam Road (Hong Kong)

The effects of cobalt doping on the electrical conductivity of La{sub 0.1}Bi{sub 0.9}Fe{sub 1-x}Co{sub x}O{sub 3} (LBFCO, x = 0, 0.01, 0.03) ceramics were investigated. It is found that the leakage current increases with cobalt dopant concentration in LBFCO. On the application of bias voltage LBFCO ceramics with cobalt doping exhibits resistive switching effects at room temperature and threshold switching effects at elevated temperatures (50 Degree-Sign C and 80 Degree-Sign C). X-ray photoelectron spectroscopy of LBFCO ceramics show that cobalt dopant is bivalent as an acceptor, which induces an enhancement of oxygen vacancy concentration in LBFCO ceramics. Possible mechanisms for both resistive switching and threshold switching effects are discussed on the basis of the interplay of bound ferroelectric charges and mobile charged defects.

• OSTI ID: 22089382
• Journal Information: Journal of Applied Physics, Vol. 112, Issue 3; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BISMUTH COMPOUNDS
CERAMICS
COBALT
COBALT COMPOUNDS
CRYSTAL DEFECTS
CRYSTALS
ELECTRIC CONDUCTIVITY
ELECTRIC POTENTIAL
FERROELECTRIC MATERIALS
LANTHANUM COMPOUNDS
LEAKAGE CURRENT
OXYGEN
TEMPERATURE RANGE 0273-0400 K
VACANCIES
X-RAY PHOTOELECTRON SPECTROSCOPY