Amorphization of thin Si layers by arsenic ion implantation
- Sharp Corp., Tenri, Nara (Japan)
- Hosei Univ., Koganei, Tokyo (Japan). Dept. of Electrical Engineering
Annealing of an amorphized Si layer formed by As{sup +} implantation into an SOI (silicon-on-insulator) Si layer was performed. Arsenic ions are implanted at 100 keV and 5.0 {times} 10{sup 15} ions/cm{sup 2} into thin (56 nm thick) and thick (1.5 {micro}m thick) Si layers. Rutherford backscattering spectrometry and transmission electron microscope measurements show the formation of a 130 nm thick amorphous layer by this implantation. In the thick Si layer, recrystallization occurred at the amorphous/crystalline interface with an annealing at 850 C. However, no recrystallization occurred within the thin Si layer because a crystalline interface did not exist. Thus, a high resistivity, amorphous n-Si layer with low electron mobility was formed.
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 220854
- Journal Information:
- Journal of the Electrochemical Society, Vol. 143, Issue 3; Other Information: PBD: Mar 1996
- Country of Publication:
- United States
- Language:
- English
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