Electrical and optical properties of Nb-doped TiO{sub 2} films deposited by dc magnetron sputtering using slightly reduced Nb-doped TiO{sub 2-x} ceramic targets
- Graduate School of Science and Engineering, Aoyama Gakuin University, 5-10-1 Fuchinobe, Sagamihara, Kanagawa 229-8558 (Japan)
Nb-doped anatase TiO{sub 2} films were deposited on unheated glass by dc magnetron sputtering using slightly reduced Nb-doped TiO{sub 2-x} targets (Nb concentration: 3.7 and 9.5 at. %) with various hydrogen or oxygen flow ratios. After postannealing in a vacuum (6x10{sup -4} Pa) at 500 deg. C for 1 h, both films were crystallized into the polycrystalline anatase TiO{sub 2} structure. The resistivity decreased from 1.6x10{sup -3} to 6.3x10{sup -4} {Omega} cm with increasing Nb concentration from 2.8 to 8.0 at. %, where the carrier density increased from 5.4x10{sup 20} to 2.0x10{sup 21} cm{sup -3} and the Hall mobility was almost constant at 5-7 cm{sup 2} V{sup -1} s{sup -1}. The films exhibited a high transparency of over 60%-80% in the visible region.
- OSTI ID:
- 22053742
- Journal Information:
- Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films, Vol. 28, Issue 4; Other Information: (c) 2010 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1553-1813
- Country of Publication:
- United States
- Language:
- English
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