Highly conductive indium zinc oxide prepared by reactive magnetron cosputtering technique using indium and zinc metallic targets
- Department of Materials Science and Engineering, National Formosa University, Huwei, Yunlin 632, Taiwan (China)
Zn-doped In{sub 2}O{sub 3} film is frequently deposited from an oxide target; but the use of metallic target is increasingly expected as preparing the film with comparable properties. This work aimed to prepare a highly conductive and transparent Zn-doped In{sub 2}O{sub 3} thin film on Corning Eagle{sup 2000} glass substrate by magnetron cosputtering method using indium and zinc targets. Structural characterization was performed using x-ray diffraction and x-ray photoelectron spectroscopy. The film had an amorphous structure when the film was prepared on an unheated substrate, but had an In{sub 2}O{sub 3} polycrystalline structure when the film was deposited on 150 and 300 deg. C substrates. The electrical properties of the film were greatly affected by annealing; the Zn-doped In{sub 2}O{sub 3} film had a low resistivity of 6.1x10{sup -4} {Omega} cm and an average transmittance of 81.7% when the film was deposited without substrate heating and followed a 600 deg. C annealing.
- OSTI ID:
- 22053688
- Journal Information:
- Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films, Vol. 28, Issue 3; Other Information: (c) 2010 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1553-1813
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
DEPOSITION
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
GLASS
INDIUM
INDIUM OXIDES
MAGNETRONS
POLYCRYSTALS
SEMICONDUCTOR MATERIALS
SPUTTERING
SUBSTRATES
THIN FILMS
X-RAY DIFFRACTION
X-RAY PHOTOELECTRON SPECTROSCOPY
ZINC
ZINC OXIDES