Microelectromechanical system assembled ion optics: An advance to miniaturization and assembly of electron and ion optics

Journal Article · Tue Sep 15 00:00:00 EDT 2009 · Review of Scientific Instruments

DOI:https://doi.org/10.1063/1.3222980· OSTI ID:22051036

Fox, J; Verbeck, G ^[1]; Saini, R; Tsui, K ^[2]

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1. University of North Texas, Denton, Texas 76203 (United States)
2. Zyvex, Richardson, Texas 75081 (United States)

Deep-reactive ion etching of n-doped silicon-on-insulator is utilized to make ion optical components to aid in the miniaturization of mass analyzers. The microelectromechanical system components are bound to aluminum nitride substrates and employed three-dimensional assembly. The assembly methods are tested for breakdown (V{sub b}), durability, and alignment. Demonstration of ion manipulation is shown with a 1 mm Bradbury-Nielsen gate, 500 {mu}m Einzel lens, 500 {mu}m coaxial ring ion trap, and reflectron optics. Data are presented showing the resolution, attenuation, and performance of each of these devices. We demonstrate advantages and disadvantages of this technology and its applications to mass analysis.

• OSTI ID: 22051036
• Journal Information: Review of Scientific Instruments, Vol. 80, Issue 9; Other Information: (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0034-6748
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALIGNMENT
ALUMINIUM NITRIDES
ATTENUATION
DOPED MATERIALS
ELECTRONS
ETCHING
IONS
MICROELECTRONICS
MINIATURIZATION
OPTICS
RESOLUTION
SILICON
SUBSTRATES
THREE-DIMENSIONAL CALCULATIONS
TRAPS