Analysis of leakage current mechanisms in Pt/Au Schottky contact on Ga-polarity GaN by Frenkel-Poole emission and deep level studies

Journal Article · Fri Jul 01 00:00:00 EDT 2011 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3607245· OSTI ID:22036655

Rao, Peta Koteswara; Park, Byungguon; Lee, Sang-Tae; Noh, Young-Kyun; Kim, Moon-Deock ^[1]; Oh, Jae-Eung ^[2]

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1. Department of Physics, Chungnam National University, 220 Gung-dong, Yuseong-gu, Daejeon 305-764 (Korea, Republic of)
2. School of Electrical and Computer Engineering, Hanyang University, Ansan 425-791 (Korea, Republic of)

We report the Frenkel-Poole emission in Pt/Au Schottky contact on Ga-polarity GaN grown by molecular beam epitaxy using current-voltage-temperature (I-V-T) characteristics in the temperature ranging from 200 K to 375 K. Using thermionic emission model, the estimated Schottky barrier height is 0.49 eV at 200 K and 0.83 eV at 375 K, respectively, and it is observed that the barrier height increases with increase in temperature. The extracted emission barrier height ({phi}{sub t}) for Ga-polarity GaN Schottky diode by Frenkel-Poole theory is about 0.15 eV. Deep level transient spectroscopy study shows a deep level with activation energy of 0.44 eV, having capture cross-section 6.09 x 10{sup -14} cm{sup 2}, which is located between the metal and semiconductor interface, and trap nature is most probably associated with dislocations in Ga-polarity GaN. The analysis of I-V-T characteristics represents that the leakage current is due to effects of electrical field and temperature on the emission of electron from a trap state near the metal-semiconductor interface into continuum states associated with conductive dislocations in Ga-polarity GaN Schottky diode.

• OSTI ID: 22036655
• Journal Information: Journal of Applied Physics, Vol. 110, Issue 1; Other Information: (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ACTIVATION ENERGY
CAPTURE
CROSS SECTIONS
DEEP LEVEL TRANSIENT SPECTROSCOPY
DISLOCATIONS
ELECTRIC CONDUCTIVITY
ELECTRIC FIELDS
ELECTRIC POTENTIAL
GALLIUM NITRIDES
GOLD
INTERFACES
LEAKAGE CURRENT
MOLECULAR BEAM EPITAXY
PLATINUM
SEMICONDUCTOR MATERIALS
TEMPERATURE DEPENDENCE
THERMIONIC EMISSION
TRAPS