(001) textured L1{sub 0}-FePt pseudo spin valve with TiN spacer
- Department of Materials Science and Engineering, National University of Singapore, 117576 Singapore (Singapore) and Data Storage Institute, Agency of Science, Technology and Research (A-STAR), 117608 Singapore (Singapore)
- Data Storage Institute, Agency of Science, Technology and Research (A-STAR), 117608 Singapore (Singapore)
- Department of Materials Science and Engineering, National University of Singapore, 117576 Singapore (Singapore)
TiN was investigated as a potential spacer material in L1{sub 0}-FePt based pseudo spin valves (PSV). PSVs with the structure MgO/L1{sub 0}-Fe{sub 50}Pt{sub 50} (20 nm)/TiN (5 nm)/L1{sub 0}-Fe{sub 50}Pt{sub 50} (x nm) were fabricated, where x was varied from 5 to 20 nm. The highest giant magnetoresistance (GMR) ratio of 0.61% was obtained for the PSV with a top L1{sub 0}-FePt thickness of 20 nm. Contributions to the GMR arose from both the spin dependent scattering at the FePt/TiN interfaces and domain wall resistivity. Magnon magnetoresistance was also observed in the fabricated PSVs.
- OSTI ID:
- 22027850
- Journal Information:
- Applied Physics Letters, Vol. 99, Issue 25; Other Information: (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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