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Title: High-T{sub c} and high-J{sub c} SmFeAs(O,F) films on fluoride substrates grown by molecular beam epitaxy

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.3664632· OSTI ID:22027837
; ; ;  [1];  [2]
  1. Department of Applied Physics, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588 (Japan)
  2. Department of Applied Chemistry, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)

Superconducting thin films of SmFeAs(O,F) were prepared by molecular beam epitaxy on fluoride substrates. In our process, F-free SmFeAsO films were grown first, and F was subsequently introduced to the films by diffusion from an overlayer of SmF{sub 3}. By this simple process, record high T{sub c}, namely, T{sub c}{sup on} (T{sub c}{sup end}) = 57.8 K (56.4 K) was obtained in a film on CaF{sub 2}. Furthermore, the films on CaF{sub 2} showed high critical current density over 1 MA/cm{sup 2} in the self-field at 5 K. The correlation between superconductivity and epitaxial strain in SmFeAs(O,F) films is discussed.

OSTI ID:
22027837
Journal Information:
Applied Physics Letters, Vol. 99, Issue 23; Other Information: (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
Country of Publication:
United States
Language:
English